Datasheet Details
| Part number | STD7NB20-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 415.04 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD7NB20-1 Download (PDF) |
|
|
Overview: www.DataSheet4U.com N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK PowerMESH™ MOSFET TYPE STD7NB20 STD7NB20-1 s s s s s s STD7NB20 STD7NB20-1 VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 7A 7A TYPICAL RDS(on) = 0.
Download the STD7NB20-1 datasheet PDF. This datasheet also includes the STD7NB20 variant, as both parts are published together in a single manufacturer document.
| Part number | STD7NB20-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 415.04 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD7NB20-1 Download (PDF) |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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