STE110NA20 datasheet by STMicroelectronics.
| Part number | STE110NA20 |
|---|---|
| Datasheet | STE110NA20_STMicroelectronics.pdf |
| File Size | 367.78 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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Unit V µA mA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 1 mA T c = 100o C 110 Min. Unit S nF pF pF 2/8 STE110NA20 (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on...
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