STE40NA60 datasheet by STMicroelectronics.
| Part number | STE40NA60 |
|---|---|
| Datasheet | STE40NA60_STMicroelectronics.pdf |
| File Size | 91.85 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS =0.8x Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V Test Conditions ID = 1mA I D = 20 A 40 Min. 3.75 0.135 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10...
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