STE53NA50 datasheet by STMicroelectronics.
| Part number | STE53NA50 |
|---|---|
| Datasheet | STE53NA50_STMicroelectronics.pdf |
| File Size | 88.36 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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Un it V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 C o ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 1 mA ID = 27 A 53 Min. 3.75 0.085 Un it V Ω A Static Drain-source On V GS = 10V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS...
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