STG3P2M10N60B Datasheet | STMicroelectronics

1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module PRELIMINARY DATA General Features .. Type VCES 600V VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 10A - - - - - - - - N-channel very fast Power MESH™ IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution pact design Semitop®2 is a trademark of semikron SEMITOP®2 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBT, with outstanding performances. Applications - - High frequency motor controls Motor drivers Order codes Sales type STG3P2M10N60B Marking G3P2M10N60B Package SEMITOP®2 Packaging SEMIBOX May 2006 Rev1 1/12 .st. 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents Contents 1 2 Electrical...