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STGB6NC60H - N-CHANNEL IGBT

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Features

  • Type STGB6NC60H.
  • VCES 600V VCE(sat)max @25°C.

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Full PDF Text Transcription

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www.DataSheet4U.com STGB6NC60H N-channel 600V - 7A - D2PAK Very fast PowerMESH™ IGBT General features Type STGB6NC60H ■ ■ ■ ■ VCES 600V VCE(sat)max @25°C <2.5V IC @100°C 7A Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation 3 1 D²PAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
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