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STGD7NB60M Datasheet N-channel 7a - 600v To-220 / Dpak Powermesh IGBT

Manufacturer: STMicroelectronics

Overview: STGP7NB60M - STGD7NB60M N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT TYPE STGP7NB60M STGD7NB60M s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25°C < 1.9 V < 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.

The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS www.DataSheet4U.com s s MOTOR CONTROLS SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDERING INFORMATION SALES TYPE STGP7NB60M STGD7NB60MT4 MARKING GP7NB60M GD7NB60M PACKAGE TO-220 DPAK PACKAGING TUBE TAPE & REEL June 2003 1/11 STGP7NB60M - STGD7NB60M ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.

Operating Junction Temperature 80 0.64 – 55 to 150 150 600 ±20 14 7 56 70 0.56 Value DPAK V V A A A W W/°C °C °C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 62.5 DPAK 1.78 100 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ± 20V , VCE = 0 Min.

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