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STGD8NC60K - (STGx8NC60K) Short circuit rated PowerMESH IGBT

Download the STGD8NC60K datasheet PDF. This datasheet also covers the STGB8NC60K variant, as both devices belong to the same (stgx8nc60k) short circuit rated powermesh igbt family and are provided as variant models within a single manufacturer datasheet.

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Features

  • Type STGB8NC60K STGD8NC60K STGP8NC60K.
  • VCES 600V 600V 600V VCE(sat)Typ @25°C 2.2V 2.2V 2.2V IC @100°C 8A 8A 8A 3 1 2 3 1 DPAK TO-220 Lower on voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10µs Figure 1. Internal schematic diagram 3 1 D²PAK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB8NC60K_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STGD8NC60KD short circuit rugged IGBT
STGD10NC60K N-CHANNEL IGBT
STGD10NC60S Fast IGBT
STGD10NC60SD 10A - 600V Fast IGBT
STGD14NC60K N-CHANNEL IGBT

Full PDF Text Transcription

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www.DataSheet4U.com STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH™ IGBT Features Type STGB8NC60K STGD8NC60K STGP8NC60K ■ ■ ■ ■ VCES 600V 600V 600V VCE(sat)Typ @25°C 2.2V 2.2V 2.2V IC @100°C 8A 8A 8A 3 1 2 3 1 DPAK TO-220 Lower on voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10µs Figure 1.
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