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STGE200NB60S Datasheet N-channel IGBT

Manufacturer: STMicroelectronics

Overview: STGE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH™ IGBT TYPE STGE200NB60S s s s s s VCES 600 V VCE(sat) (typ.) 1.2 V 1.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LOW FREQUENCY MOTOR CONTROLS s ALUMINUM WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.

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