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STGF19NC60HD - very fast IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • Type STGF19NC60HD.
  • VCES 600V IC @100°C (max)@25°C < 2.5V 9A 3 VCE(sat) Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode 1 2 TO-220FP.

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Full PDF Text Transcription for STGF19NC60HD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STGF19NC60HD. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com STGF19NC60HD N-channel 600V - 9A - TO-220FP Very fast PowerMESH™ IGBT General features Type STGF19NC60HD ■ ■ ■ VCES 600V IC @100°C (max)@25°C < 2.5V 9...

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atures Type STGF19NC60HD ■ ■ ■ VCES 600V IC @100°C (max)@25°C < 2.5V 9A 3 VCE(sat) Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode 1 2 TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

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