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STGF20NB60S - N-CHANNEL IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • TYPE STGF20NB60S VCES 600 V VCE(sat) (Max) @25°C < 1.7 V IC @100°C 13 A Figure 1: Package LOW ON-.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH™ IGBT Table 1: General Features TYPE STGF20NB60S VCES 600 V VCE(sat) (Max) @25°C < 1.7 V IC @100°C 13 A Figure 1: Package LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency to applications (<1kHz).