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STGP10NB60SD - low drop IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • Type STGP10NB60SD.
  • VCES 600V VCE(sat) (Max)@ 25°C < 1.7V IC @100°C 10A HIGH.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT General features Type STGP10NB60SD ■ ■ VCES 600V VCE(sat) (Max)@ 25°C < 1.7V IC @100°C 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) TO-220 3 1 2 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz). Internal schematic diagram Applications ■ ■ ■ LIGHT DIMMER STATIC RELAYS MOTOR CONTROL Order codes Sales Type STGP10NB60SD Marking GP10NB60SD Package TO-220 Packaging TUBE November 2005 Rev 1 1/12 www.st.