Datasheet4U Logo Datasheet4U.com

STGP14HF60KD - Short-circuit Rugged IGBT

Download the STGP14HF60KD datasheet PDF. This datasheet also covers the STGF14HF60KD variant, as both devices belong to the same short-circuit rugged igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Table 1.

Features

  • Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 1 2 1 3 2 3 TO-220FP TO-220.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGF14HF60KD_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGP100N30 Fast IGBT STMicroelectronics
STGP10H60DF 600V 10A IGBT STMicroelectronics
STGP10M65DF2 Trench gate field-stop IGBT STMicroelectronics
STGP10NC60KD 600V short-circuit rugged IGBT STMicroelectronics
STGP15H60DF Trench gate field-stop IGBT STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGP14N60D 14 A - 600 V - Short Circuit Rugged IGBT
STGP14N60D 14 A - 600 V - Short Circuit Rugged IGBT
STGP14NC60KD 600V short-circuit rugged IGBT
STGP10HF60KD Short-circuit Rugged IGBT
STGP10N60L N-CHANNEL IGBT

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STGF14HF60KD STGP14HF60KD 14 A - 600 V - short-circuit rugged IGBT Preliminary data Features ■ ■ ■ ■ ■ ■ Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 1 2 1 3 2 3 TO-220FP TO-220 Applications ■ ■ ■ Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1.
Published: |