STGP7NB60FD Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. Unit V µA µA nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 µA VGE = 15V, IC = 7 A VGE = 15V, IC= 7 A, Tj =125°C Min. Test Conditions VCE...