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STGW35HF60WD - Ultra Fast IGBT

General Description

The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature.

Suffix "W" denotes a subset of products tailored to high switching frequency operation over 100 kHz.

Figure 1.

Key Features

  • Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3.

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STMicroelectronics Logo STGW35HF60W Ultrafast IGBT STMicroelectronics

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STGW35HF60WD www.datasheet4u.com 35 A, 600 V ultra fast IGBT Preliminary data Features ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ ■ Welding Induction heating High frequency converters Power factor correction TO-247 1 Description The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. Suffix "W" denotes a subset of products tailored to high switching frequency operation over 100 kHz. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW35HF60WD Package TO-247 Packaging Tube Order code STGW35HF60WD April 2009 Doc ID 15592 Rev 1 1/9 www.st.