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STGW35HF60WDI - ultrafast IGBT

General Description

The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature.

The suffix "W" denotes a subset of products tailored to high switching frequency operation (over 100 kHz).

Figure 1.

Key Features

  • Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode 3.

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STMicroelectronics Logo STGW35HF60W Ultrafast IGBT STMicroelectronics

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www.DataSheet4U.com STGW35HF60WDI 35 A, 600 V ultra fast IGBT Features ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ Welding Induction heating Resonant converters TO-247 1 Description The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. The suffix "W" denotes a subset of products tailored to high switching frequency operation (over 100 kHz). Figure 1. Internal schematic diagram Table 1. Device summary Marking GW35HF60WDI 35HF60WDI Package TO-247 Tube TO-247 long leads Packaging Order code STGW35HF60WDI STGWA35HF60WDI September 2009 Doc ID 16090 Rev 2 1/10 www.st.