Datasheet4U Logo Datasheet4U.com

STH8NA80FI - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Download the STH8NA80FI datasheet PDF. This datasheet also covers the STH8NA80 variant, as both devices belong to the same n - channel enhancement mode power mos transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH8NA80_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STH80N10F7-2 N-CHANNEL POWER MOSFET STMicroelectronics
STH80N10F7-2 N-Channel MOSFET INCHANGE
STH80N10LF7-2AG N-CHANNEL POWER MOSFET STMicroelectronics
STH81002Z 1550nm Laser in Coaxial TO-Package Siemens
STH8103 Hall Effect Switch Semtron

Other Datasheets by STMicroelectronics

Part Number Description
STH8NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH8NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STH8N80 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH8N80FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I s s s s s s s V DSS 800 V 800 V R DS(on) < 1.50 Ω < 1.50 Ω ID 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 2 1 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.