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STH8NB90 - N-CHANNEL MOSFET

Download the STH8NB90 datasheet PDF. This datasheet also covers the STH8NB90FI variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Note: The manufacturer provides a single datasheet file (STH8NB90FI_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

More Datasheets from STMicroelectronics

Part Number Description
STH8NB90FI N-CHANNEL MOSFET
STH8N80 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH8N80FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH8NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STH8NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH10NA50 N-CHANNEL Power MOS MOSFET
STH10NA50FI N-CHANNEL Power MOS MOSFET
STH10NC60 N-CHANNEL Power MOS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.