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STI8N65M5 - Power MOSFETs

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Type STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 VDSS @ RDS(on) TJmax max. ID 710 V < 0.6 Ω 7 A PTOT 70 W 70 W 25 W 70 W 70 W 70 W.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating.
  • High dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB8N65M5, STD8N65M5, STF8N65M5, STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages Datasheet — production data Features Type STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 VDSS @ RDS(on) TJmax max. ID 710 V < 0.6 Ω 7 A PTOT 70 W 70 W 25 W 70 W 70 W 70 W ■ Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Applications ■ Switching applications 3 2 1 TO-220FP TAB 3 1 DPAK TAB 3 2 1 TO-220 TAB 123 I²PAK TAB 3 1 D²PAK TAB IPAK 3 2 1 Figure 1.