Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
Features
- Type
STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5
VDSS @ RDS(on) TJmax max. ID
710 V < 0.6 Ω 7 A
PTOT
70 W 70 W 25 W 70 W 70 W 70 W.
- Worldwide best RDS(on).
- area.
- Higher VDSS rating.
- High dv/dt capability.
- Excellent switching performance.
- Easy to drive.
- 100% avalanche tested.
STI8N65M5 Datasheet
