STL18N55M5 Datasheet | STMicroelectronics

Features Type STL18N55M5 VDSS @ TJmax 600 V RDS(on) max < 0.240 Ω ID 13 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case - - - 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X(6 Application - Switching applications Figure 1. Internal schematic diagram Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is bined with STMicroelectronics’ well-known Power MESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. $ ' 3 !-V Table 1. Device summary Marking 18N55M5 Package Power FLAT™ (8x8) HV Packaging Tape and reel Order code STL18N55M5 May 2010 Doc ID 17468 Rev 1 1/11 .st. 11 This is preliminary...