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STN817 Datasheet

PNP Medium Power Transistors

Manufacturer: STMicroelectronics

STN817 Overview

(Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -120 V V CE = -80 V V EB = -5 V I C = -10 mA -80 Min. Pulse duration = 300 µs, duty cycle 1.5 % 2/5 STF817 - STN817 SOT-223 mm MIN. 0.071 0.031 0.122 0.013 0.264 DIM.

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