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STP08IE120F4 - Emitter Switched Bipolar Transistor

General Description

The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Key Features

  • www. DataSheet4U. com VCS(ON) 0.8 V IC 8A RCS(ON) 0.10 W.
  • High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L.

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STP08IE120F4 Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω Preliminary Data General features www.DataSheet4U.com VCS(ON) 0.8 V IC 8A RCS(ON) 0.10 W ■ High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L ■ ■ ■ ■ ■ Applications ■ Internal schematic diagrams Aux SMPS for three phase mains Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies.