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STP08IE120F4 Datasheet Emitter Switched Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: STP08IE120F4 Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.

General Description

The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Order codes Part Number STP08IE120F4 Marking P08IE120F4 Package TO220FP-4L Packing Tube November 2006 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation.

Key Features

  • www. DataSheet4U. com VCS(ON) 0.8 V IC 8A RCS(ON) 0.10 W.
  • High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L.

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