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STP10NA40FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Download the STP10NA40FI datasheet PDF. This datasheet also covers the STP10NA40 variant, as both devices belong to the same n - channel enhancement mode fast power mos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP10NA40_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP10N10L N-Channel Enhancement Mode Low Threshold Power MOS Transistor
STP10N10LFI N-Channel Enhancement Mode Low Threshold Power MOS Transistor
STP10NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) STP10NA40 STP10NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP10NA40 STP10NA40FI s s s s s s s VDSS 400 V 400 V R DS(on) < 0.55 Ω < 0.55 Ω ID 10 A 6A TYPICAL RDS(on) = 0.46 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 3 1 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.