STP12IE90F4 Datasheet | STMicroelectronics

.. Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω General Features VCS(ON) 1V - IC 12A RCS(ON) 0.083 High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L - - - - - Applications - - Internal schematic diagrams Flyback SMPS for adapter Flyback / forward SMPS for desktop Description The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based...