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STP12IE90F4 Datasheet Emitter Switched Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: .. STP12IE90F4 Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.

General Description

The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 Order codes Part Number STP12IE90F4 Marking P12IE90F4 Package TO220FP-4L Packing Tube January 2007 Rev 2 1/11 .st.

Key Features

  • VCS(ON) 1V.
  • IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L.

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