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STP14NF10 - N-CHANNEL Power MOSFET

General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.

Key Features

  • Type STP14NF10 VDSS RDS(on) max 100 V < 0.13 Ω ID 15 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.

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STP14NF10 N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET™ II Power MOSFET Features Type STP14NF10 VDSS RDS(on) max 100 V < 0.13 Ω ID 15 A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1.