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STP14NF10
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET™ II Power MOSFET
Features
Type STP14NF10
VDSS RDS(on) max 100 V < 0.13 Ω
ID 15 A
■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
Application
■ Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1.
STP14NF10 Datasheet
