Datasheet Summary
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STB185N55 STP185N55
N-channel 55V
- 2.9mΩ
- 120A
- D2PAK/TO-220 MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General Features
Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1)
3 1 2
1. Value limited by wire bonding
- -
3 1
Ultra low on-resistance 100% avalanche tested
TO-220
D2PAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche...