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STP19N06FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

This page provides the datasheet information for the STP19N06FI, a member of the STP19N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR family.

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Part number STP19N06FI
Manufacturer STMicroelectronics
File Size 216.53 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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www.DataSheet4U.com STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
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