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STP200NF04 - N-CHANNEL POWER MOSFET

General Description

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

Key Features

  • Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 1 D2PAK DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.