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STP20NE10 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing re

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® STP20NE10 N - CHANNEL 100V - 0.07Ω - 20A - TO-220 STripFET™ MOSFET TYPE ST P20NE10 s s s s V DSS 100 V R DS(on) < 0.1 Ω ID 20 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/...

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00 V R DS(on) < 0.1 Ω ID 20 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 3 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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