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STP20NM50 - N-CHANNEL POWER MOSFET

Download the STP20NM50 datasheet PDF. This datasheet also covers the STP20NM50FP variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.

Key Features

  • Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP20NM50FP_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP20NM50FD N-Channel MOSFET INCHANGE
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STP20NM60FD N-Channel MOSFET INCHANGE
STP20NM60FP N-Channel MOSFET INCHANGE
STP20NM65N N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP20NM50FD N-CHANNEL POWER MOSFET
STP20NM50FP N-CHANNEL POWER MOSFET
STP20NM60 N-CHANNEL POWER MOSFET
STP20NM60A N-CHANNEL MOSFET
STP20NM60FD N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET General features Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.