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STP36N06L Datasheet

Manufacturer: STMicroelectronics
STP36N06L datasheet preview

Datasheet Details

Part number STP36N06L
Datasheet STP36N06L_STMicroelectronics.pdf
File Size 274.92 KB
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET TRANSISTOR
STP36N06L page 2 STP36N06L page 3

STP36N06L Overview

Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 15 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 5 V Test Conditions I D = 250 µ A I D = 18 A 36 Min. 2.5 0.04 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V...

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