| Part number | STP3NA90 |
|---|---|
| Datasheet | STP3NA90_STMicroelectronics.pdf |
| File Size | 111.32 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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Unit V µA µA mA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-Source Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance V GS = 10 V V GS = 10 V Test Conditions ID Min. 2.8 690 80 20 900 105 30 Max.
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STP3NA90FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA100 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA100FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA50FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA80 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA80FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3N90 | N-Channel Enhancement Mode Power MOS Transistor |
