Datasheet4U Logo Datasheet4U.com

STP4NC80Z - N-CHANNEL MOSFET

Datasheet Summary

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP4NC80Z.

📥 Download Datasheet

Datasheet preview – STP4NC80Z

Datasheet Details

Part number STP4NC80Z
Manufacturer STMicroelectronics
File Size 445.83 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP4NC80Z Datasheet
Additional preview pages of the STP4NC80Z datasheet.

📁 Similar Datasheet

  • STP4NC80ZFP - N-CHANNEL MOSFET (STMicroelectronics)
  • STP4NC60 - N-CHANNEL MOSFET (STMicroelectronics)
  • STP4N150 - N-Channel MOSFET (STMicroelectronics)
  • STP4N20 - N-channel Power MOSFET (STMicroelectronics)
  • STP4N40FI - N-Channel Enhancement Mode Power MOS Transistor (STMicroelectronics)
  • STP4N52K3 - N-channel Power MOSFET (STMicroelectronics)
  • STP4N80K5 - N-CHANNEL MOSFET (STMicroelectronics)
  • STP4N90K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP4NA60FP - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (STMicroelectronics)
  • STP4NK50ZD - N-channel Power MOSFET (STMicroelectronics)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP4NC80Z/FP www.DataSheet4U.com STB4NC80Z/-1 s s VDSS 800V 800V RDS(on) < 2.8 Ω < 2.8 Ω ID 4A 4A 2 1 3 1 2 3 s s s TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D PAK TO-220 TO-220FP DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
Published: |