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STP4NK50Z - N-Channle MOSFET

This page provides the datasheet information for the STP4NK50Z, a member of the STP-4NK N-Channle MOSFET family.

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP4NK50Z.

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Datasheet Details

Part number STP4NK50Z
Manufacturer STMicroelectronics
File Size 664.95 KB
Description N-Channle MOSFET
Datasheet download datasheet STP4NK50Z Datasheet
Additional preview pages of the STP4NK50Z datasheet.

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Full PDF Text Transcription

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STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 s s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 2.7 < 2.7 < 2.7 < 2.7 Ω Ω Ω Ω ID 3 3 3 3 A A A A Pw 45 W 20 W 45 W 45 W 3 1 2 TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 1 3 2 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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