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STP4NK50Z - N-Channle MOSFET

Download the STP4NK50Z datasheet PDF. This datasheet also covers the STP-4NK variant, as both devices belong to the same n-channle mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP4NK50Z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP-4NK-50Z.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STP4N40 N-Channel MOSFET
STP4N62K3 SuperMESH3 Power MOSFET
STP4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA40F1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA40FI N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 s s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 2.7 < 2.7 < 2.7 < 2.7 Ω Ω Ω Ω ID 3 3 3 3 A A A A Pw 45 W 20 W 45 W 45 W 3 1 2 TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 1 3 2 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.