STP50N06 datasheet by STMicroelectronics.
| Part number | STP50N06 |
|---|---|
| Datasheet | STP50N06_STMicroelectronics.pdf |
| File Size | 282.08 KB |
| Manufacturer | STMicroelectronics |
| Description | N-Channel Enhancement Mode Power MOS Transistor |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100o C 50 Min. 4 0.028 0.056 Unit V Ω Ω A V GS = 10 V I D = 25 A V GS = 10 V I D = 25 A On State...
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|---|---|
| STP50N06FI | N-Channel Enhancement Mode Power MOS Transistor |
| STP50N06L | N-Channel Enhancement Mode Power MOS Transistor |
| STP50N06LFI | N-Channel Enhancement Mode Power MOS Transistor |
| STP50N05L | N-Channel Enhancement Mode Power MOS Transistor |
| STP50N05LFI | N-Channel Enhancement Mode Power MOS Transistor |
| STP50NE08 | N-Channel Power MOSFET |
| STP50NE10 | N-Channel Enhancement Mode Power MOS Transistor |
| STP50NE10L | N-Channel Enhancement Mode Power MOS Transistor |
| STP53N05 | N-Channel Enhancement Mode Power MOS Transistor |
| STP53N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
