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STP5NC50 Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™ II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω ID 5.5A 5.5A 5.5A 5.5A 3 1 TYPICAL RDS(on) = 1.

General Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .

The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter I2PAK INTERNAL SCHEMATIC DIAGRAM Value STP5NC50 STB5NC50/-1 STP5NC50FP Unit VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5.5 3.5 22 100 0.8 500 500 ±30 5.5(*) 3.5(*) 22 35 0.28 3.5 2500 -55 to 175 -65 to 175 (*)Limited only by maximum temperature allowed V V V A A A W W/°C V/ns V °C °C (•)Pulse width limited by safe operating area (1)ISD ≤5.5A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

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