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STP60NE06-16 STP60NE06-16FP
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE STP60NE06-16 STP60NE06-16FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.016 Ω < 0.016 Ω
ID 60 A 35 A
TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
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DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP60NE06-16 Datasheet
