STP60NE06-16 Datasheet | STMicroelectronics

STP60NE06-16 STP60NE06-16FP - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STP60NE06-16 STP60NE06-16FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.016 Ω < 0.016 Ω ID 60 A 35 A TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical...