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STP60NS04ZB - N-CHANNEL CLAMPED MOSFET

Description

This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.

Features

  • Type VDSS STP60NS04ZB Clamped RDS(on) < 0.015Ω ID 60A.
  • 100% avalanche tested.
  • Low capacitance and gate charge.
  • 175 °C maximum junction temperature.

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Full PDF Text Transcription

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STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET General features Type VDSS STP60NS04ZB Clamped RDS(on) < 0.015Ω ID 60A ■ 100% avalanche tested ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature Description This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
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