STP60NS04ZB Datasheet | STMicroelectronics

N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET General Features Type VDSS STP60NS04ZB Clamped RDS(on) < 0.015Ω ID 60A - 100% avalanche tested - Low capacitance and gate charge - 175 °C maximum junction temperature Description This fully clamped Power MOSFET is produced by using the latest advanced pany’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also remended. Applications - Switching application 3 2 1 TO-220 Internal schematic diagram Order codes Part number STP60NS04ZB Marking P60NS04ZB Package TO-220 Packaging Tube October 2006 Rev 2 1/13 .st. Contents...