STP6NC80Z - N-CHANNEL Power MOSFET

Product Overview

ST Microelectronics

Datasheet Details

Part number	STP6NC80Z
Manufacturer	STMicroelectronics
File Size	442.23 KB
Description	N-CHANNEL Power MOSFET
Datasheet	STP6NC80Z Datasheet
Additional preview pages of the STP6NC80Z datasheet.

Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP6NC80Z.

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Published: Sep 2, 2005 |