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STP7NB60FP - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

This page provides the datasheet information for the STP7NB60FP, a member of the STP7NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET family.

Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Details

Part number STP7NB60FP
Manufacturer STMicroelectronics
File Size 115.50 KB
Description N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Datasheet download datasheet STP7NB60FP Datasheet
Additional preview pages of the STP7NB60FP datasheet.

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Full PDF Text Transcription

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STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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