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STP7NB60FP - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Download the STP7NB60FP datasheet PDF. This datasheet also covers the STP7NB60 variant, as both devices belong to the same n - channel enhancement mode powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP7NB60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by STMicroelectronics

Part Number Description
STP7NB60 N-CHANNEL MOSFET
STP7NB30 N-CHANNEL MOSFET
STP7NB40 N-CHANNEL MOSFET
STP7NB80 N-CHANNEL MOSFET
STP7N52DK3 Power MOSFETs
STP7N80Z N-Channel MOSFET
STP7NA40 N-CHANNEL MOSFET
STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP7NA60 N-CHANNEL MOSFET
STP7NC40 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.