STP80NF10 Datasheet | STMicroelectronics

STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STrip FET™ II Power MOSFET Features Type STP80NF10 STB80NF10 VDSS 100 V 100 V RDS(on) max < 0.015 Ω < 0.015 Ω - Exceptional dv/dt capability - 100% Avalanche tested - Application oriented characterization 80 A 80 A Applications - Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for tele and puter application. It is also intended for any application with low gate charge drive requirements. 3 2 1 TO-220 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking P80NF10@ STB80NF10T4 B80NF10@ Package TO-220...