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STP80NF10 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application.

Key Features

  • Type STP80NF10 STB80NF10 VDSS 100 V 100 V RDS(on) max < 0.015 Ω < 0.015 Ω.
  • Exceptional dv/dt capability.
  • 100% Avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET Features Type STP80NF10 STB80NF10 VDSS 100 V 100 V RDS(on) max < 0.015 Ω < 0.015 Ω ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID 80 A 80 A Applications ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. 3 2 1 TO-220 3 1 D²PAK Figure 1.