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STP8NA50FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Download the STP8NA50FI datasheet PDF. This datasheet also covers the STP8NA50 variant, as both devices belong to the same n-channel enhancement mode fast power mos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP8NA50_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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STP8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8NA50FI s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85 Ω < 0.85 Ω ID 8A 4.5 A TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.