Datasheet Details
| Part number | STPS2060CT |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 43.99 KB |
| Description | POWER SCHOTTKY RECTIFIER |
| Download | STPS2060CT Download (PDF) |
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Overview: ® STPS2060CT POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF.
| Part number | STPS2060CT |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 43.99 KB |
| Description | POWER SCHOTTKY RECTIFIER |
| Download | STPS2060CT Download (PDF) |
|
|
|
High voltage dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters.
Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required.
ABSOLUTE R ATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current Tcase = 120°C VR = 60V δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz tp = 100 µs Parameter Repetitive peak reverse voltage Per diode Per diode Per device Per diode Per diode Per diode Value 60 30 10 20 200 1 1 - 65 to + 150 150 10000 V/µs Unit V A A TO-220AB A1 K A2 2 x 10 A 60 V 0.58 V A1 K A2 IFSM IRRM IRSM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum junction temperature A A A °C Critical rate of rise of reverse voltage July 1998 - Ed : 1C 1/3 STPS2060CT THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.9 0.15 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL STATIC CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Test Conditions VR = VRRM Tj = 25°C Tj = 125°C VF ** Forward voltage drop IF = 20 A IF = 10 A IF = 20 A C Capacitance 60 V, 1MHz Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C 150 0.58 Min.
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