Datasheet Details
| Part number | STPS20L15 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 363.55 KB |
| Description | Low drop OR-ing power Schottky diode |
| Datasheet | STPS20L15_STMicroelectronics.pdf |
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Overview: ® STPS20L15D/G LOW DROP OR-ing POWER SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF.
| Part number | STPS20L15 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 363.55 KB |
| Description | Low drop OR-ing power Schottky diode |
| Datasheet | STPS20L15_STMicroelectronics.pdf |
|
|
|
Packaged in TO-220AC or D2PAK, this device is especially intended for use as an OR-ing diode in fault tolerant power supply equipments.
TO-220AC STPS20L15D A A K 20 A 15 V 125°C 0.33 V K K NC D2PAK STPS20L15G ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt * : Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 115°C δ = 1 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz tp = 100 µs Value 15 30 20 310 2 3 - 65 to + 150 125 10000 Unit V A A A A A °C °C V/µs dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj July 1999 - Ed: 2B 1/5 STPS20L15D/G THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 1.6 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min.
Typ.
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