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STPS30150CW Datasheet High Voltage Power Schottky Rectifier

Manufacturer: STMicroelectronics

Overview: STPS30150C High voltage power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-220AB A2 K A1 TO-220FPAB TO-247 A2 K A1 K.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Dual center tap Schottky rectifier designed for high frequency switch mode power supply.

Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 2 x 15 A 150 V 175 °C 0.69 V A2 A1 D2PAK A2 A1 May 2017 DocID7757 Rev 9 This is information on a product in full production.

1/16 www.st.com Characteristics STPS30150C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbo l Parameter Value Unit VRRM Repetitive peak reverse voltage 150 V IF(RMS) Forward rms current 30 A TC = 120 °C Per diode 15 Average forward TO-220FPAB TC = 90 °C Per device 30 IF(AV) current δ = 0.5, A square wave TO-220AB, TC = 155 °C Per diode 15 D2PAK, TO-247 TC = 150 °C Per device 30 Surge non IFSM repetitive forward tp = 10 ms sinusoidal current 220 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 750 W Tstg Storage temperature range Tj Maximum operating junction temperature (1) -65 to +175 °C +175 °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Key Features

  • High junction temperature capability.
  • Good trade off between leakage current and forward voltage drop.
  • Low leakage current.
  • Avalanche capability specified.
  • Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine.

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