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STPS60L15CW Datasheet Low Drop Or-ing Power Schottky Diode

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com ® STPS60L15CW LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF.

General Description

Dual center tap schottky rectifier packaged in TO-247 and suited for N+1 redundancy operations, this device has an optimized forward voltage drop to reduce the power losses in the application.

ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tcase = 115°C δ = 0.5 Per diode Per device Value 15 40 30 60 400 2 3 24000 - 65 to + 150 125 10000 A A A W °C °C V/µs Unit V A A TO-247 tp = 10 ms Sinusoidal tp = 2µs F = 1kHz tp = 100µs tp = 1µs Tj = 25°C * : dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/4 July 2003 - Ed: 1A DataSheet 4 U .com www.DataSheet4U.com STPS60L15CW THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) Parameter Junction to case Per diode Total Coupling Value 0.8 0.55 0.3 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min.

Typ.

Key Features

  • s 2 x 30 A 15 V 125°C 0.33 V A1 K A2 s s s VERY LOW.

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