STPS60L15CW
STPS60L15CW is LOW DROP OR-ing POWER SCHOTTKY DIODE manufactured by STMicroelectronics.
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LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features
AND BENEFITS s
2 x 30 A 15 V 125°C 0.33 V
A1 K A2 s s s
VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE OPERATION JUNCTION TEMPERATURE: 125°C REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS AVALANCHE CAPABILITY SPECIFIED
A2 K A1
DESCRIPTION Dual center tap schottky rectifier packaged in TO-247 and suited for N+1 redundancy operations, this device has an optimized forward voltage drop to reduce the power losses in the application. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj d V/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature
- Critical rate of rise of reverse voltage Tcase = 115°C δ = 0.5 Per diode Per device Value 15 40 30 60 400 2 3 24000
- 65 to + 150 125 10000 A A A W °C °C V/µs Unit V A A TO-247 tp = 10 ms Sinusoidal tp = 2µs F = 1k Hz tp = 100µs tp = 1µs Tj = 25°C
- : d Ptot 1 thermal runaway condition for a diode on its own heatsink < d Tj Rth( j
- a )
1/4
July 2003
- Ed: 1A
Data Sheet 4 U .
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THERMAL RESISTANCES Symbol Rth(j-c) Rth(c)
When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
Parameter Junction to case Per diode Total Coupling
Value 0.8 0.55 0.3
Unit °C/W °C/W
STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR
- VF
- Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C
Pulse test :
- tp = 380 µs, δ <...
