STPS80H100CY
STPS80H100CY is HIGH VOLTAGE POWER SCHOTTKY RECTIFIER manufactured by STMicroelectronics.
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features
AND BENEFITS HIGH REVERSE VOLTAGE NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT HIGH TEMPERATURE LOW THERMAL RESISTANCE DESCRIPTION Dual center tap Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in Max247, this device is intended for use in high frequency puter and tele converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj d V/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature
- Critical rate of rise of reverse voltage Tc = 155 °C δ = 0.5 2 x 40 A 100 V 175 °C 0.70 V
A1 K A2
A2 K A1
Max247
Value 100 50 Per diode Per device 40 80 400 2
- 65 to + 175 175 10000
Unit V A A A A °C °C V/µs tp = 10 ms sinusoidal tp = 2 µs square F = 1k Hz
- : d Ptot 1 < thermal runaway condition for a diode on its own heatsink Rth(j- a) d Tj
1/4
November 1999
- Ed: 1B
Data Sheet 4 U .
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THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.7 0.5 0.3 Unit °C/W
When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR
- VF
- - Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test :
- tp = 5 ms, δ < 2 %
- - tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0035 x IF2(RMS)
Min.
Typ. 7
Max. 20 20 0.8 0.7 0.94 0.84
Unit µA m A...
