STPS80H100TV Datasheet | STMicroelectronics

.. ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOODTRADE OFF BETWEEN LEAKAGECURRENT AND FORWARD VOLTAGE DROP AVALANCHE RATED LOW INDUCTANCE PACKAGE INSULATED PACKAGE : Insulated voltage = 2500 V (RMS) Capacitance = 45 p F DESCRIPTION High voltage dual Schottky barrier rectifier designed for high frequency tele and puter Switched Mode Power Supplies and other power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM T stg Tj d V/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Tc = 120 °C δ = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 125 40 80 700 2 5 - 55 to+ 150 150 10000 Unit V A A A A A °C °C V/µs 2 x 40 A 100 V 150 °C 0.65 V K1 A1 K2 A2 ISOTOPTM Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequen cy circuitries where low switching losses and low noise are required. tp = 10 ms sinusoidal tp = 2 µs square F = 1k Hz tp = 100 µs square Storage temperature range Maximum operating junction temperature - Critical rate of rise of reverse voltage - : d Ptot 1 < thermal runaway condition for a diode on its own heatsink d Tj Rth(j- a) 1/4 July 1999 - Ed: 3A Data Sheet 4 U . .. THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - VF - - Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : - tp = 5 ms, δ < 2% - - tp = 380 µs, δ <...