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STQ1NC60R Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com STQ1NC60R N-CHANNEL 600V - 12Ω - 0.3A TO-92 PowerMESH™II Power MOSFET TYPE STQ1NC60R s s s s s VDSS 600 V RDS(on) < 15 Ω ID 0.

General Description

Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS LOW SWITCH MODE POWER SUPPLIES (SMPS) s BATTERY CHARGER s ORDERING INFORMATION SALES TYPE STQ1NC60R STQ1NC60R-AP MARKING Q1NC60R Q1NC60R PACKAGE TO-92 TO-92 PACKAGING BULK AMMOPACK www.DataSheet4U.com July 2003 1/9 www.DataSheet4U.com STQ1NC60R ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 600 600 ± 30 0.3 0.19 1.2 3.1 0.025 3 -65 to 150 -65 to 150 Unit V V V A A A W W/°C V/ns °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

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