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STRH80P6FSY3 - P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET

General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

It is therefore suitable as power switch in mainly highefficiency DC-DC converters.

Key Features

  • www. DataSheet4U. com Type STRH80P6FSY3 VDSS 60V.
  • Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested.

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Full PDF Text Transcription for STRH80P6FSY3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STRH80P6FSY3. For precise diagrams, and layout, please refer to the original PDF.

STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET General features www.DataSheet4U.com Type STRH80P6FSY3 VDSS 60V ■ ■ ■ ■ ■ ■...

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al features www.DataSheet4U.com Type STRH80P6FSY3 VDSS 60V ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-254AA Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters.

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